trench色怎么翻译trench [英] [trent] [美] [trnt]
n. 沟，渠; 战壕;
vt. 掘沟;
vi. 挖战壕; 侵害
trench，在一种香水上看到的，不知道什么牌子TIENS天狮 法都Trench 传奇女士职业型香水
规格：50ml/瓶
专柜价：288元
香型：花香料
前调：佛手柑，柠檬，小豆劳动，红莓，中国柑橘
中调：绿茶，玫瑰，莲花，粉胡椒
尾调：椰汁，水杉，雪杉木，龙延香
产品介绍
香水是对自己或情人的宠爱。
优雅，诱惑，时尚——法国系列的颂歌，将巴黎精神收纳于一瓶之中
娇艳的玫瑰混合以万寿菊，散发出甜蜜芬芳，释放你如火热情。
地沟的英语---trench地沟（trench）
Trenches,which run parallel to the coast ,may be as much as 200 km wide and 2400 km long.The Challenger Deep, in the Pacific Ocean's Mariana Trench, is the world's deepest point,extending 11 km below the surface of the ocean. 沟槽，和海岸平行，也许是多达200 km宽和2400 km长。很深，在太平洋的玛丽安娜沟槽，是世界的最深刻的点，在海洋的表面之下延续11 km。
Trenches are very deep,steep-sided drops in the ocean floor that form when one of Earth's plates slides under another.堑壕都非常深，陡峭的海底形成时，地球板块一块在另一块之上。
沟槽金属氧化物半导体场效应晶体管（Trench MOSFET）的工作原理是什么？工作原理是：当栅极和源极间加正向电压时，在P-和栅极相邻的区域，形成垂直的沟道，电流从漏极流向源极时，同样的，电流垂直流过芯片内部。其结构特点为栅极的宽度远小于垂直导电的平面结构，具有更小的单元的尺寸和导通电阻。
肯辛顿trench和传统风衣的区别风衣的历史已有百年，如今看来，最经得起时间考验。它的款式、面料有自己独特的语言，在惊鸿一瞥中就能留下深刻印象；它的实用性又无可比拟，在忽冷忽热最难将息的秋天，一件风衣随意穿脱，风雨无阻，既能伴你远行天涯，也能随手披来上街。
风衣如今已呈现出许多新的风貌。以世界风衣系列的先驱伦敦雾为例，这个曾经在《魂断蓝桥》中扮演了经典角色的品牌今季在保留了传统与经典的风格基础上，更强调“以人为本”的概念。色彩上以卡其绿为基调，以藏青、蓝、灰色、米色、咖啡色为主，非常便于与正装西服搭配，塑造出稳重、亲切却不沉闷的感觉。面料上采用了国际风行的高科技面料，以棉为主的混织面料既有棉的舒适性，又非常便于洗涤。最富有新意的是伦敦雾本季倡导的干练、利落的短款风衣，它的长度在膝盖以上10～15厘米左右，非常便于驾车族穿着，翻领、暗排扣的多种设计为都市商务一族提供了更多选择的机会。
TrenchMOS transistor 这是什么类型的管子 Trench应该怎么翻译Trench = Trenchgate 沟渠式的
该技术参考下列说明 :
TrenchMOS or Trenchgate MOS-
overview or tutorial about the basics and essential details of the TrenchMOS or Trench Gate MOS field effect transistor an electronics component used in many applications to give higher power performance than traditional FETs
Field effect transistor, FET technology includes:
• Junction FET or JFET
• MOSFET
• VMOS
• UMOS
• TrenchMOS
• GaAs FET / MESFET
• HEMT / PHEMT
The TrenchMOS technology provides a significant improvement over previous power MOS technologies. This new form of power MOSFET is an electronics component which uses a new structure to provide a more direct and hence more efficient path for the current flow within the semiconductor device.
The TrenchMOS technology is an MOS "trench" style technology developed by Philips Semiconductors, now NXP which provides high levels of performance in terms of current density and low "ON" resistance. Although many manufacturers have their own forms of "trench" technology, TrenchMOS is the process that is manufactured and marketed by NXP.
The TrenchMOS devices offer electronics designers a choice of lower heat dissipation for the same size chip, a higher current handling capability from the same sized chip, or a smaller chip with the same dissipation. When choosing electronics components, TrenchMOS is a semiconductor technology that ahs plenty to offer when power MOSFET applications are needed.
TrenchMOS structure
TrenchMOS uses a vertical structure for the FET device. This has the advantage that it provide a structure in which a much shorter channel can be fabricated. As the current only flows through a relatively small area, resistance values can be high reducing the efficiency of the device.
TrenchMOS uses a vertical structure as shown below. From this it can be seen that this form of semiconductor device has the source is at the top of the device, and the drain is at the bottom. Instead of flowing horizontally as in the standard FET, current in this device flows vertically.
TrenchMOS field effect transistor structure
TrenchMOS has differences to other forms of vertical MOS semiconductor device structures. Rather than using the more established V-groove structure, a different trench format is used. With TrenchMOS FET technology, the gate is formed by etching a trench in the semiconductor structure which then has an insulating oxide layer added and then filled with polysilicon. The resulting structure is more optimally configured for the operation of a power MOSFET, where the depth of the structure is of vital importance to the operation and the resistance. This results in the on resistance being considerably reduced when compared to other FET electronics components.
The low resistance of the TrenchMOS FETs means that heat sinks are not required in many instances, enabling these devices to be made in surface mount packages for easy assembly on printed circuit boards, i.e. SOT223 and SOT404 (equivalent to D2PAK). The Rds(on) values comprise 8, 14, 18 and 24 milli-Ohm and a choice of 5V or 10V operational drive voltage, all with a peak voltage load tolerance of up to 55V. These devices also have built-in ElectroStatic Discharge protection of up to 2kV to protect during handling and assembly.
TrenchMOS applications
There are many applications for TrenchMOS devices. They allow such a device, i.e. in any portable electrical product that requires voltages of less than 100V to be switched on and off, but the most significant area is in automotive. Here there are three main uses on which Philips is focussing their use:
Provide an alternative to relays that the automotive industry wants to replace as, being electro-mechanical, they are not as reliable as solid state switches.
Achieve low resistances values of typically around 8 milli-Ohms using TrechMOS semiconductor. This can enable two conventional 15 milli-Ohm devices used in parallel (a typical technique used to achieve low resistance values) to be swapped for one device, thereby saving PCB space.
TrenchMOS FET semiconductor devices enable electronics circuits to be made much smaller, again saving in cost and PCB space
In addition to these applications, TrenchMOS FET devices are incorporated in many integrated circuit chips.
Marⅰanas,TrenCh中文是什么意思？Marianas Trench.马里亚纳斯海沟，
名字源于（Mariana Trench），
是一个年轻人的艺术组合
（Mariana Trench马里亚纳海沟）位于11 °20′N，142°11.5′E，即菲律宾东北、马里亚纳群岛附近的太平洋.